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Journal Articles

Ortho-positronium annihilation in room temperature ionic liquids

Hirade, Tetsuya

Acta Physica Polonica A, 132(5), p.1470 - 1472, 2017/11

 Times Cited Count:3 Percentile:28.88(Physics, Multidisciplinary)

The positron annihilation lifetime measurements in RTILs showed very strange results. Finally, positron annihilation age-momentum correlation (AMOC) measurements indicated that it was caused by slow bubble formation in RTILs. Then I discovered the oscillation of o-Ps annihilation rates in room temperature ionic liquids (RTILs) which indicated, probably, the oscillation of the Ps bubble. Stepanov et al. calculated change of the bubble size in many liquids and the oscillation of the bubble was not expected except for a liquid He. It means that the structure of RTILs in nanometer scale is very different from usual liquids. Moreover, o-Ps pick-off annihilation rates seems to be too small for the macroscopic surface tension of RTILs. I am going to discuss what you can study by the positron annihilation methods for the structure of RTILs in nanometer scale.

Journal Articles

Oxidation of aqueous HF-treated Si(001) surface induced by translational kinetic energy of O$$_{2}$$ at room temperature

Yoshigoe, Akitaka; Teraoka, Yuden

Japanese Journal of Applied Physics, Part 1, 42(9A), p.5749 - 5750, 2003/09

 Times Cited Count:2 Percentile:10.7(Physics, Applied)

We investigated oxidation reactions induced by the translational kinetic energy of O$$_{2}$$ on an Si(001) surface treated with aqueous hydrofluoric acid (HF) solution by combining synchrotron radiation photoemission spectroscopy with supersonic molecular beam techniques. The oxidation reactions at room temperature did not progress following up to approximately 3600 L exposure of O$$_{2}$$ with incident energy of 0.04 eV. On the other hand, the oxidation states up to the Si$$^{4+}$$ species including the Si$$^{1+}$$, Si$$^{2+}$$ and Si$$^{3+}$$ species were formed when the incident energy was 3.0 eV. The thickness of oxidized layers was estimated to be 0.26 nm at the final oxidation stages. Thus, we concluded that the Si atoms at the top layers were oxidized by the translational kinetic energy of 3.0 eV.

Journal Articles

Observation of defect clusters in masked thin foil CU by He$$^{+}$$ ion irradiation

*; *; *; ; ;

Proc.XIth Int.Cong.on Electron Microscopy, p.1281 - 1282, 1986/00

no abstracts in English

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